US5U3TR【PDF 3/4 页】MOSFET N-CH 30V 1.5A TUMT5

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US5U3

Transistors

Electrical characteristics curves

1000

Ta=25 ° C

f=1MHz

V GS =0V

Ciss

1000

tf

Ta=25 ° C

V DD =15V

V GS =4.5V

R G =10 ?

Pulsed

6

Ta=25 ° C

V DD =15V

5 I D =1.5A

R G =10 ?

Pulsed

100

Coss

Crss

100

td(off)

4

3

10

10

td(on)

tr

2

1

1

0.01

0.1

1

10

100

1

0.01

0.1

1

10

0

0

0.5

1

1.5

2

DRAIN-SOURCE VOLTAGE : V DS (V)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

DRAIN CURRENT : I D (A)

Fig.2 Switching Characteristics

TOTAL GATE CHARGE : Qg (nC)

Fig.3 Dynamic Input Characteristics

10

V DS =10V

Pulsed

1.0

0.9

Ta=25 ° C

Pulsed

10

V GS =0V

Pulsed

0.8

I D =1.5A

1

0.1

Ta=125 ° C

75 ° C

25 ° C

? 25 ° C

0.7

0.6

0.5

0.4

I D =0.75A

1

0.1

Ta=125 ° C

75 ° C

25 ° C

? 25 ° C

0.01

0.3

0.2

0.1

0.001

0.0

0.5

1.0

1.5

2.0

2.5

0

0

1

2

3

4

5

6

7

8

9

10

0.01

0.0

0.5

1.0

1.5

GATE-SOURCE VOLTAGE : V GS (V)

Fig.4 Typical Transfer Characteristics

GATE-SOURCE VOLTAGE : V GS (V)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate source Voltage

SOURCE-DRAIN VOLTAGE : V SD (V)

Fig.6 Source Current vs.

Source-Drain Voltage

10

V GS =4.5V

10

V GS =4.0V

10

V GS =2.5V

Pulsed

Pulsed

Pulsed

1

Ta=125 ° C

1

Ta=125 ° C

1

Ta=125 ° C

75 ° C

0.1

75 ° C

25 ° C

? 25 ° C

0.1

75 ° C

25 ° C

? 25 ° C

0.1

25 ° C

? 25 ° C

0.01

0.1

1

10

0.01

0.1

1

10

0.01

0.1

1

10

DRAIN CURRENT : I D (A)

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current ( Ι )

DRAIN CURRENT : I D (A)

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙ )

DRAIN CURRENT : I D (A)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙΙ )

Rev.B

3/3

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